advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 75v lower on-resistance r ds(on) 5m rohs compliant & halogen-free i d 125a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.9 /w rthj-a 40 /w data and specifications subject to change without notice drain-source voltage gate-source voltage continuous drain current (chip) pulsed drain current 1 138.9 400 total power dissipation 3.13 continuous drain current, v gs @ 10v 78 total power dissipation halogen-free product parameter ap95t07bgs-hf -55 to 150 100 rating 75 + 20 125 thermal data parameter storage temperature range 201112071 1 maximum thermal resistance, junction-ambient (pcb mount) 4 -55 to 150 operating junction temperature range continuous drain current, v gs @ 10v 3 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 75 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =60a - 90 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 96 154 nc q gs gate-source charge v ds =60v - 25 - nc q gd gate-drain ("miller") charge v gs =10v - 40 - nc t d(on) turn-on delay time v ds =40v - 20 - ns t r rise time i d =40a - 70 - ns t d(off) turn-off delay time r g =1 -37- ns t f fall time v gs =10v - 15 - ns c iss input capacitance v gs =0v - 5100 8160 pf c oss output capacitance v ds =25v - 700 - pf c rss reverse transfer capacitance f=1.0mhz - 340 - pf r g gate resistance f=1.0mhz - 1.3 2.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 55 - ns q rr reverse recovery charge di/dt=100a/s - 110 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 100a. 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap95t07bgs-hf 2
a p95t07bgs-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 300 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0 40 80 120 160 200 048121620 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =1ma i d =1ma
ap95t07bgs-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain current fig 12. gate charge waveform v.s. case temperature 4 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =60v q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 40 80 120 160 25 50 75 100 125 150 175 t c , case temperature ( o c ) i d , drain current (a) limited by package
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